NGTB40N135IHRWG
IGBT TRENCH/FS 1350V 80A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB40N135IHRWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1350V and a continuous collector current capability of 80A, with a pulsed collector current of 120A. With a maximum power dissipation of 394W and a Vce(on) of 2.7V at 15V gate-emitter voltage and 40A collector current, it offers efficient switching. The gate charge is specified at 234 nC, and the turn-off delay time is 250ns at 25°C, tested under a 600V, 40A, 10 Ohm, 15V condition. The switching energy (off) is 1.3mJ. This IGBT is housed in a TO-247-3 package, suitable for through-hole mounting, and operates within an ambient temperature range of -40°C to 175°C. It finds application in power conversion systems such as industrial motor drives and renewable energy inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/250ns |
| Switching Energy | 1.3mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 234 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 394 W |
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