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NGTB40N120SWG

IGBT 40A 1200V TO-247

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi NGTB40N120SWG is a Trench IGBT designed for demanding applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 80A, with a pulsed rating of 200A. The device offers a maximum power dissipation of 535W and a low on-state voltage of 2.4V at 15V gate-emitter voltage and 40A collector current. Typical switching characteristics include an on-state delay of 116ns and an off-state delay of 286ns at 25°C, with a switching energy of 3.4mJ (on) and 1.1mJ (off). The gate charge is specified at 313 nC. Packaged in an industry-standard TO-247-3 through-hole configuration, the NGTB40N120SWG is suitable for high-power switching applications within the industrial and automotive sectors. Operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)240 ns
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 40A
Supplier Device PackageTO-247-3
IGBT TypeTrench
Td (on/off) @ 25°C116ns/286ns
Switching Energy3.4mJ (on), 1.1mJ (off)
Test Condition600V, 40A, 10Ohm, 15V
Gate Charge313 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)200 A
Power - Max535 W

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onsemi’s core components include:

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onsemi is known for power, sensing, and energy-efficient semiconductor product lines used in automotive, industrial, and energy applications.

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