NGTB40N120SWG
IGBT 40A 1200V TO-247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB40N120SWG is a Trench IGBT designed for demanding applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 80A, with a pulsed rating of 200A. The device offers a maximum power dissipation of 535W and a low on-state voltage of 2.4V at 15V gate-emitter voltage and 40A collector current. Typical switching characteristics include an on-state delay of 116ns and an off-state delay of 286ns at 25°C, with a switching energy of 3.4mJ (on) and 1.1mJ (off). The gate charge is specified at 313 nC. Packaged in an industry-standard TO-247-3 through-hole configuration, the NGTB40N120SWG is suitable for high-power switching applications within the industrial and automotive sectors. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 240 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 116ns/286ns |
| Switching Energy | 3.4mJ (on), 1.1mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 313 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 535 W |
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