NGTB40N120S3WG
IGBT 1.2KV 40A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB40N120S3WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) with a maximum collector-emitter voltage of 1200 V. This device features a continuous collector current capability of 160 A, with a pulsed collector current also rated at 160 A. The IGBT type is Trench Field Stop, and it offers a maximum power dissipation of 454 W. Key electrical characteristics include a low on-state voltage (Vce(on)) of 1.95V at 15V gate-emitter voltage and 40A collector current. The gate charge is specified at 212 nC, with typical turn-on delay (Td(on)) of 12ns and turn-off delay (Td(off)) of 145ns at 25°C and test conditions of 600V, 40A, 10 Ohm, 15V. Switching energy is 2.2mJ (on) and 1.1mJ (off). The NGTB40N120S3WG is housed in a TO-247-3 package for through-hole mounting and operates within a temperature range of -55°C to 175°C. This component is suitable for applications in industrial power conversion and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 163 ns |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 12ns/145ns |
| Switching Energy | 2.2mJ (on), 1.1mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 212 nC |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 454 W |
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