NGTB40N120LWG
IGBT 1200V 40A TO247Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi NGTB40N120LWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 80 A, with a pulsed capability of 320 A. The IGBT type is Trench Field Stop, offering efficient switching characteristics with a maximum power dissipation of 260 W. Key parameters include a gate charge of 420 nC and on/off switching times of 140 ns/360 ns at 25°C, under a test condition of 600 V, 40 A, 10 Ohm, and 15 V. The on-state voltage drop (Vce(on)) is a maximum of 2.35 V at 15 V gate-emitter voltage and 40 A collector current. Switching energy is rated at 5.5 mJ for turn-on and 1.4 mJ for turn-off. This device is packaged in a TO-247-3 for through-hole mounting and operates within a temperature range of -55°C to 150°C. It is commonly utilized in power factor correction, electric vehicle powertrains, and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 140ns/360ns |
| Switching Energy | 5.5mJ (on), 1.4mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 420 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 320 A |
| Power - Max | 260 W |
Request a Quote
Clients Also Buy
NGTB30N120LWG
IGBT 1200V 30A TO247
NGTB35N60FL2WG
IGBT TRENCH/FS 600V 70A TO247
FGD3245G2-F085
IGBT 450V 23A TO252AA
