NGTB40N120L3WG
IGBT 1200V 160A TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB40N120L3WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 160 A at a junction temperature of 175°C. The device features a maximum on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 40A collector current. With a maximum power dissipation of 454 W, it is suitable for demanding power conversion tasks. The TO-247-3 package facilitates through-hole mounting. Key switching parameters include a gate charge of 220 nC and a reverse recovery time (trr) of 86 ns. Typical turn-on delay (Td(on)) is 18 ns with a turn-off delay (Td(off)) of 150 ns, measured at 600V, 40A, 10 Ohm, and 15V. This IGBT is utilized in industries such as industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 86 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 18ns/150ns |
| Switching Energy | 1.5mJ (on), 1.5mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 220 nC |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 454 W |
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