NGTB40N120IHRWG
IGBT 1200V 80A 384W TO247Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi NGTB40N120IHRWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component offers a maximum collector-emitter voltage of 1200V and a continuous collector current of 80A, with a pulsed current capability of 120A. It features a low on-state voltage of 2.55V at 15V gate-emitter voltage and 40A collector current, and a switching energy of 950µJ (off) under test conditions of 600V, 40A, 10 Ohm, 15V. With a maximum power dissipation of 384W and a gate charge of 225 nC, this IGBT is suitable for demanding power conversion and control systems. The device operates within an ambient temperature range of -40°C to 175°C (TJ) and is housed in a TO-247 package for through-hole mounting. Applications for this component include industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 40A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/230ns |
| Switching Energy | 950µJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 225 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 384 W |
Request a Quote
Clients Also Buy
FGY160T65SPD-F085
650V FS GEN3 TRENCH IGBT
NGD18N40CLBT4
IGBT 430V 15A DPAK
NGTB60N60SWG
IGBT 600V 120A 298W TO247
