NGTB40N120IHLWG
IGBT 1200V 40A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB40N120IHLWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This device features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 80 A, with a pulsed capability of 320 A. The IGBT type is Trench Field Stop, offering excellent performance characteristics. With a maximum power dissipation of 260 W and a gate charge of 420 nC, it is suitable for demanding power electronics designs. The on-state voltage (Vce(on)) is a maximum of 2.35V at 15V gate-emitter voltage and 40A collector current. Key switching parameters include a turn-off switching energy of 1.4 mJ (off) and a typical turn-off delay of 360 ns at 25°C, under test conditions of 600V, 40A, 10 Ohm, and 15V. The NGTB40N120IHLWG is housed in a TO-247-3 package, designed for through-hole mounting, and operates within an ambient temperature range of -55°C to 150°C. This component is commonly utilized in motor control, power supplies, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/360ns |
| Switching Energy | 1.4mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 420 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 320 A |
| Power - Max | 260 W |
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