NGTB40N120FLWG
IGBT 1200V 40A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB40N120FLWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) with a maximum collector-emitter voltage of 1200 V. This device features a continuous collector current capability of 80 A at 25°C, with a pulsed current rating of 160 A. The IGBT exhibits a low saturation voltage (Vce(on)) of 2.2 V at 15 V gate-emitter voltage and 40 A collector current. It boasts a maximum power dissipation of 260 W and a gate charge of 415 nC. Typical turn-on and turn-off delay times at 25°C are 130 ns and 385 ns respectively, with switching energies of 2.6 mJ (on) and 1.6 mJ (off) under the specified test conditions of 600 V, 40 A, 10 Ohm, and 15 V. The NGTB40N120FLWG is housed in a TO-247-3 package, suitable for through-hole mounting, and operates within an ambient temperature range of -55°C to 150°C. This component is commonly utilized in high-voltage power switching applications across industries such as industrial automation, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 130ns/385ns |
| Switching Energy | 2.6mJ (on), 1.6mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 415 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 260 W |
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