NGTB40N120FL2WAG
IGBT FIELD STOP 1200V 160A TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB40N120FL2WAG is a 1200V, 160A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device offers a maximum power dissipation of 536W and an on-state voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 40A collector current. Featuring a standard input type and a 313 nC gate charge, the NGTB40N120FL2WAG exhibits switching times of 30ns turn-on and 145ns turn-off at 25°C. The device has a reverse recovery time (trr) of 240 ns and provides switching energies of 1.7mJ (on) and 1.1mJ (off) under test conditions of 600V, 40A, 10 Ohm, and 15V. The operating temperature range is -55°C to 175°C (TJ). This component is supplied in a TO-247-4L package suitable for through-hole mounting and is available in tube packaging. It is commonly utilized in power supplies, motor control, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 240 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-4L |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 30ns/145ns |
| Switching Energy | 1.7mJ (on), 1.1mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 313 nC |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 536 W |
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