NGTB35N60FL2WG
IGBT TRENCH/FS 600V 70A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB35N60FL2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 70A, with a pulsed current rating of 120A. The Vce(on) is rated at 2V maximum at 15V gate-emitter voltage and 35A collector current. Key performance metrics include a gate charge of 125 nC, switching energies of 840µJ (turn-on) and 280µJ (turn-off) at 400V, 35A, 10O, and 15V, and typical turn-on/off delays of 72ns/132ns. The device supports a maximum power dissipation of 300W and operates across an extended temperature range of -55°C to 175°C. The NGTB35N60FL2WG is packaged in a TO-247-3 through-hole configuration and is suitable for use in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 68 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 72ns/132ns |
| Switching Energy | 840µJ (on), 280µJ (off) |
| Test Condition | 400V, 35A, 10Ohm, 15V |
| Gate Charge | 125 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 300 W |
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