NGTB30N65IHL2WG
IGBT TRENCH/FS 650V 60A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB30N65IHL2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance switching applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 60 A, with a pulsed capability of 120 A. Its low on-state voltage (Vce(on)) of 2.2 V at 15 V gate-emitter voltage and 30 A collector current, alongside a switching energy of 200 µJ (off), ensures efficient operation. The device boasts a gate charge of 135 nC and a typical turn-off delay (Td(off)) of 145 ns at 25°C under specified test conditions (400V, 30A, 10O, 15V). Packaged in a TO-247-3 through-hole configuration, the NGTB30N65IHL2WG operates across a wide temperature range from -55°C to 175°C. This IGBT is suitable for power factor correction, motor control, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 430 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/145ns |
| Switching Energy | 200µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 135 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 300 W |
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