NGTB30N60SWG
IGBT 600V 60A 189W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB30N60SWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component features a collector-emitter breakdown voltage of 660 V and a continuous collector current rating of 60 A, with a pulsed current capability of 120 A. It offers a low on-state voltage (Vce(on)) of 2.2 V at 15 V gate-emitter voltage and 30 A collector current, contributing to reduced conduction losses.
With a maximum power dissipation of 189 W and a junction temperature range of -55°C to 150°C, the NGTB30N60SWG is suitable for demanding environments. The device exhibits typical switching times of 57 ns turn-on and 109 ns turn-off at 25°C, with switching energies of 750 µJ (on) and 540 µJ (off) under specified test conditions. The TO-247-3 package facilitates through-hole mounting. This IGBT is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and solar inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 57ns/109ns |
| Switching Energy | 750µJ (on), 540µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 90 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 189 W |
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