NGTB30N60L2WG
IGBT 600V 30A TO247Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi NGTB30N60L2WG is a 600V, 30A Insulated Gate Bipolar Transistor (IGBT) in a TO-247-3 package. This component offers a continuous collector current of 100A and a pulsed collector current of 60A, with a maximum power dissipation of 225W. Key electrical characteristics include a Vce(on) of 1.6V at 15V Vge and 30A Ic, and a gate charge of 166 nC. Switching performance is characterized by a Trr of 70 ns and switching energies of 310 µJ (on) and 1.14 mJ (off) under test conditions of 300V, 30A, 30 Ohm, and 15V. The device operates at junction temperatures up to 175°C and is presented in tube packaging. This IGBT is suitable for applications in power conversion and motor control systems across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 70 ns |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/390ns |
| Switching Energy | 310µJ (on), 1.14mJ (off) |
| Test Condition | 300V, 30A, 30Ohm, 15V |
| Gate Charge | 166 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 225 W |
Request a Quote
Clients Also Buy
NGTB30N120LWG
IGBT 1200V 30A TO247
NGTB35N60FL2WG
IGBT TRENCH/FS 600V 70A TO247
FGD3245G2-F085
IGBT 450V 23A TO252AA
