NGTB30N60IHLWG
IGBT 600V 30A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB30N60IHLWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 60A, with a pulsed collector current of 150A. It is optimized for low conduction losses and fast switching speeds, characterized by a Vce(on) of 2.3V at 15V gate-emitter voltage and 30A collector current. The IGBT exhibits a switching energy of 280µJ (off) under test conditions of 400V, 30A, 10 Ohm, and 15V. With a gate charge of 130 nC and typical turn-on and turn-off delays of 70ns and 140ns respectively at 25°C, it provides efficient operation. The NGTB30N60IHLWG is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in industrial power supplies, motor control, and solar inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 400 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 70ns/140ns |
| Switching Energy | 280µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 130 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 250 W |
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