NGTB30N60FLWG
IGBT 600V 60A 250W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB30N60FLWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a robust 600 V collector-emitter breakdown voltage and a continuous collector current rating of 60 A, with a pulsed capability of 120 A. It delivers a maximum power dissipation of 250 W and exhibits a low on-state voltage (Vce(on)) of 1.9 V at 15 V gate-emitter voltage and 30 A collector current. With a typical gate charge of 170 nC and switching energy figures of 700 µJ (on) and 280 µJ (off) under specified test conditions (400V, 30A, 10O, 15V), the NGTB30N60FLWG ensures efficient operation. The device is housed in a TO-247-3 package, facilitating through-hole mounting. Its operating temperature range spans from -55°C to 150°C (TJ). This IGBT is commonly employed in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 72 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 83ns/170ns |
| Switching Energy | 700µJ (on), 280µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 250 W |
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