onsemi NGTB30N140IHR3WG is a high-performance Insulated Gate Bipolar Transistor designed for demanding power switching applications. This through-hole component, housed in a TO-247-3 package, features a 1400V breakdown voltage and a 30A continuous collector current rating. Its monolithic construction ensures robust performance and reliability. This IGBT is well-suited for use in industrial motor drives, power factor correction circuits, and uninterruptible power supplies (UPS), where efficient high-voltage switching is critical. The TO-247-3 package provides excellent thermal management capabilities, essential for maintaining performance under heavy loads.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet: