NGTB30N135IHRWG
IGBT TRENCH/FS 1350V 60A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB30N135IHRWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1350 V and a continuous collector current capability of 60 A (120 A pulsed). With a maximum power dissipation of 394 W and a low on-state voltage (Vce(on)) of 2.65V at 15V gate drive and 30A collector current, it offers efficient power switching. The device exhibits a gate charge of 234 nC and switching energy (off) of 850 µJ at the specified test conditions (600V, 30A, 10 Ohm, 15V). Packaged in a TO-247-3 through-hole configuration, the NGTB30N135IHRWG operates across a temperature range of -40°C to 175°C (TJ). This IGBT is utilized in demanding sectors such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.65V @ 15V, 30A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/250ns |
| Switching Energy | 850µJ (off) |
| Test Condition | 600V, 30A, 10Ohm, 15V |
| Gate Charge | 234 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 394 W |
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