NGTB30N135IHR1WG
IGBT 1350V 30A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB30N135IHR1WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. It features a collector-emitter breakdown voltage of 1350 V and a continuous collector current of 60 A, with a pulsed capability of 120 A. The device offers a maximum power dissipation of 394 W and a low on-state voltage of 3 V at 15 V gate-emitter voltage and 30 A collector current. Its trench field-stop technology contributes to efficient switching with an off-state switching energy of 630 µJ. The TO-247-3 package with through-hole mounting facilitates integration into various power electronic systems. This component is suitable for demanding applications across industries such as industrial power supplies, motor control, and renewable energy systems. The operating temperature range is from -40°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/200ns |
| Switching Energy | 630µJ (off) |
| Test Condition | 600V, 30A, 10Ohm, 15V |
| Gate Charge | 220 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 394 W |
| Qualification | - |
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