NGTB30N120LWG
IGBT 1200V 30A TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB30N120LWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 60 A, with a pulsed current capability of 240 A. The IGBT type is Trench Field Stop, offering optimized switching performance with typical turn-on delay of 136 ns and turn-off delay of 360 ns at 25°C. Its maximum power dissipation is 560 W, and the on-state voltage drop (Vce(on)) is 2.2 V at 15 V gate-emitter voltage and 30 A collector current. The gate charge is 420 nC. The NGTB30N120LWG is housed in a TO-247-3 package for through-hole mounting and operates within an ambient temperature range of -55°C to 150°C. This IGBT is suitable for power factor correction, industrial motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 136ns/360ns |
| Switching Energy | 4.4mJ (on), 1mJ (off) |
| Test Condition | 600V, 30A, 10Ohm, 15V |
| Gate Charge | 420 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 560 W |
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