NGTB30N120IHSWG
IGBT 1200V 30A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB30N120IHSWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 60 A, with a pulsed capability of up to 200 A. The on-state voltage (Vce(on)) is specified at 2.4V at 15V gate-emitter voltage and 30A collector current. With a maximum power dissipation of 192 W and a gate charge of 220 nC, it is suitable for demanding power switching applications. The IGBT is packaged in a TO-247-3 through-hole configuration and operates within a temperature range of -55°C to 150°C. Industries utilizing this component include industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/210ns |
| Switching Energy | 1mJ (off) |
| Test Condition | 600V, 30A, 10Ohm, 15V |
| Gate Charge | 220 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 192 W |
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