NGTB30N120IHRWG
IGBT 1200V 60A 384W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB30N120IHRWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current (Ic) rating of 60 A, with a pulsed current (Icm) capability of 120 A. The device offers a maximum power dissipation of 384 W and a low on-state voltage (Vce(on)) of 2.5 V at 15 V gate-emitter voltage and 30 A collector current. Switching characteristics include an off-state switching energy of 700 µJ and a typical turn-off delay (Td(off)) of 230 ns at 25°C, tested under 600 V, 30 A, 10 Ohm, and 15 V conditions. The gate charge is 225 nC. This IGBT is housed in a TO-247-3 package for through-hole mounting and operates within an extended temperature range of -40°C to 175°C. It is commonly employed in industrial power supplies, motor control, and electric vehicle applications. The component is supplied in tubes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/230ns |
| Switching Energy | 700µJ (off) |
| Test Condition | 600V, 30A, 10Ohm, 15V |
| Gate Charge | 225 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 384 W |
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