NGTB30N120IHLWG
IGBT 1200V 30A TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB30N120IHLWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 60 A. The Vce(on) is specified at 2.2V maximum at 15V gate-source voltage and 30A collector current, with a peak pulsed collector current of 320 A. With a maximum power dissipation of 260 W, it is suitable for demanding power switching tasks. The gate charge is 420 nC, and the switching energy (off) is 1 mJ under test conditions of 600V, 30A, 10 Ohm, and 15V. The device operates within a temperature range of -55°C to 150°C and is housed in a standard TO-247-3 package for through-hole mounting. This IGBT is commonly utilized in industrial power conversion, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/360ns |
| Switching Energy | 1mJ (off) |
| Test Condition | 600V, 30A, 10Ohm, 15V |
| Gate Charge | 420 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 320 A |
| Power - Max | 260 W |
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