NGTB30N120FL2WG
IGBT TRENCH/FS 1200V 60A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB30N120FL2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device features a collector-emitter voltage of 1200V and a continuous collector current rating of 60A, with a pulsed capability of 120A. The IGBT type is Trench Field Stop, offering efficient switching performance characterized by low switching energy of 2.6mJ (on) and 700µJ (off).
Key parameters include a gate charge of 220 nC and a Vce(on) of 2.3V at 15V Vge and 30A Ic. The device operates within an extended temperature range of -55°C to 175°C (TJ) and dissipates a maximum power of 452W. The NGTB30N120FL2WG is provided in a TO-247-3 package with a through-hole mounting type, suitable for demanding industrial power conversion systems, motor drives, and uninterruptible power supplies. The reverse recovery time (trr) is 240 ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 240 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 98ns/210ns |
| Switching Energy | 2.6mJ (on), 700µJ (off) |
| Test Condition | 600V, 30A, 10Ohm, 15V |
| Gate Charge | 220 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 452 W |
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