NGTB25N120SWG
IGBT 25A 1200V TO-247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB25N120SWG is a 1200V Trench IGBT designed for high-power switching applications. This single IGBT features a 25A continuous collector current (Ic) and a 100A pulsed collector current (Icm). With a maximum power dissipation of 385W and a low on-state voltage (Vce(on)) of 2.4V at 15V gate drive and 25A collector current, it offers efficient operation. The device exhibits a gate charge of 178 nC and a switching energy of 1.95mJ (turn-on) and 600µJ (turn-off) under test conditions of 600V, 25A, 10 Ohm, and 15V gate drive. The NGTB25N120SWG is housed in a TO-247-3 package suitable for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. Its robust performance makes it suitable for use in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 154 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 25A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 87ns/179ns |
| Switching Energy | 1.95mJ (on), 600µJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 178 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 385 W |
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