NGTB25N120LWG
IGBT 1200V 50A 192W TO247-3Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
onsemi NGTB25N120LWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 50 A, with a pulsed current rating of 200 A. The maximum power dissipation is 192 W. Key electrical characteristics include a maximum on-state voltage (Vce(on)) of 2.3 V at 15 V gate-emitter voltage and 25 A collector current. Switching performance is characterized by switching energies of 3.4 mJ (turn-on) and 800 µJ (turn-off) at 600 V, 25 A, and 10 Ohm, with typical on and off delays of 89 ns and 235 ns respectively. The gate charge is 200 nC. Operating temperature range is from -55°C to 150°C. The NGTB25N120LWG is packaged in a TO-247-3 through-hole configuration. This IGBT is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and solar inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 25A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 89ns/235ns |
| Switching Energy | 3.4mJ (on), 800µJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 192 W |
Request a Quote
Clients Also Buy
ISL9V2040D3S
IGBT 430V 10A 130W TO252AA
FGY160T65SPD-F085
650V FS GEN3 TRENCH IGBT
NGD18N40CLBT4
IGBT 430V 15A DPAK
