NGTB25N120IHLWG
IGBT 1200V 50A TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB25N120IHLWG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This through-hole component, packaged in a TO-247-3, offers a maximum collector current of 50A and a pulsed collector current of 200A. It features a low on-state voltage of 2.3V at 15V gate-emitter voltage and 25A collector current. The device supports a maximum power dissipation of 192W and operates within a temperature range of -55°C to 150°C. Key parameters include a gate charge of 200 nC and a switching energy of 800µJ (off) at the specified test conditions. This component is suitable for use in power factor correction, uninterruptible power supplies, and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 25A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/235ns |
| Switching Energy | 800µJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 192 W |
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