NGTB25N120FLWG
IGBT 1200V 25A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB25N120FLWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 50 A, with a pulsed capability of 200 A. The IGBT features a low on-state voltage (Vce(on)) of 2.2V at 15V gate-emitter voltage and 25A collector current, ensuring efficient power delivery. Switching characteristics include a turn-on delay (Td(on)) of 91ns and turn-off delay (Td(off)) of 228ns at 25°C, with low switching energies of 1.5mJ (on) and 950µJ (off) under specified test conditions. With a maximum power dissipation of 192 W and an operating temperature range of -55°C to 150°C, the NGTB25N120FLWG is suitable for demanding applications in industrial power supplies, motor drives, and renewable energy systems. It is supplied in a TO-247-3 package for through-hole mounting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 240 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 25A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 91ns/228ns |
| Switching Energy | 1.5mJ (on), 950µJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 220 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 192 W |
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