NGTB25N120FL2WAG
IGBT FIELD STOP 1.2KV TO247-4Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB25N120FL2WAG is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 100 A, with a pulsed capability of 100 A. Its low on-state voltage (Vce(on)) of 2.4 V at 15 V gate-emitter voltage and 25 A collector current, combined with a maximum power dissipation of 385 W, makes it suitable for demanding power conversion tasks. The TO-247-4L package facilitates through-hole mounting. Key switching characteristics include a gate charge of 181 nC, turn-on delay (Td(on)) of 17 ns, and turn-off delay (Td(off)) of 113 ns at 25°C, with switching energies of 990 µJ (on) and 660 µJ (off) under specified test conditions. The operating temperature range is -55°C to 175°C. This component is frequently utilized in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 136 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 25A |
| Supplier Device Package | TO-247-4L |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 17ns/113ns |
| Switching Energy | 990µJ (on), 660µJ (off) |
| Test Condition | 600V, 50A, 10Ohm, 15V |
| Gate Charge | 181 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 385 W |
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