NGTB20N60L2TF1G
IGBT 600V 20A TO3PFManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB20N60L2TF1G is a 600V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance switching applications. This TO-3PF-3 packaged device features a low collector-emitter saturation voltage (Vce(on)) of 1.65V at 15V and 20A, with a continuous collector current (Ic) of 40A and a pulsed collector current (Icm) of 80A. The IGBT exhibits a gate charge of 84 nC and a typical turn-on delay (Td(on)) of 60ns at 25°C. With a maximum power dissipation of 64W and an operating junction temperature of 175°C, the NGTB20N60L2TF1G is suitable for power factor correction, motor control, and industrial power supplies. Reverse recovery time (trr) is specified at 70 ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3PFM, SC-93-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 70 ns |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 20A |
| Supplier Device Package | TO-3PF-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 60ns/193ns |
| Switching Energy | - |
| Test Condition | 300V, 20A, 30Ohm, 15V |
| Gate Charge | 84 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 64 W |
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