NGTB20N135IHRWG
IGBT TRENCH/FS 1350V 40A TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB20N135IHRWG is a Trench Field Stop Insulated Gate Bipolar Transistor designed for high-voltage applications. This component offers a 1350V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 120A. The NGTB20N135IHRWG features a maximum power dissipation of 394W and a low on-state voltage of 2.65V at 15V Vge and 20A Ic. It operates within a temperature range of -40°C to 175°C (TJ). The device is packaged in a TO-247-3 (TO-247) form factor suitable for through-hole mounting. Key switching characteristics include a gate charge of 234 nC and an off-state switching energy of 600µJ (off) tested at 600V, 20A, 10 Ohm, 15V. This device is commonly utilized in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.65V @ 15V, 20A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/245ns |
| Switching Energy | 600µJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 234 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 394 W |
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