NGTB20N120LWG
IGBT 1200V 40A 192W TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB20N120LWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component offers a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 200A. Featuring a low on-state voltage of 2.2V at 15V gate-emitter voltage and 20A collector current, it minimizes conduction losses. Switching characteristics include turn-on delay (Td(on)) of 86ns and turn-off delay (Td(off)) of 235ns at 25°C, with switching energy values of 3.1mJ (on) and 700µJ (off) under specified test conditions (600V, 20A, 10 Ohm, 15V). The NGTB20N120LWG has a maximum power dissipation of 192W and operates across a wide temperature range of -55°C to 150°C. Its TO-247-3 package with through-hole mounting is suitable for power electronics in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 86ns/235ns |
| Switching Energy | 3.1mJ (on), 700µJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 192 W |
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