NGTB20N120IHWG
IGBT 20A 1200V TO-247Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi NGTB20N120IHWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 40 A, with a pulsed current capability of 80 A. The IGBT type is Trench Field Stop, offering optimized switching performance with a typical turn-off delay of 170 ns at 25°C. Key parameters include a gate charge of 150 nC and a collector-emitter on-voltage of 2.65 V at 15 V gate-emitter voltage and 20 A collector current. The device dissipates a maximum power of 341 W and operates within a temperature range of -40°C to 175°C. Supplied in a TO-247-3 package for through-hole mounting, this IGBT is suitable for use in power factor correction (PFC) circuits and motor drive applications. The switching energy (off) is specified at 480 µJ under test conditions of 600 V, 20 A, 10 Ohm, and 15 V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.65V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/170ns |
| Switching Energy | 480µJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 150 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 341 W |
Request a Quote
Clients Also Buy
FGY4L160T120SWD
1200V 160A FS7 IGBT TP247-4L
NGTB30N120LWG
IGBT 1200V 30A TO247
FGH75N60UFTU
IGBT 600V 150A 452W TO247
