NGTB20N120IHTG
IGBT 1200V 20A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB20N120IHTG is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a robust 1200V breakdown voltage and a continuous collector current rating of 20A, making it suitable for use in industrial power supplies, motor drives, and uninterruptible power systems. The NGTB20N120IHTG is packaged in a standard TO-247 outline, facilitating ease of integration into existing board layouts and thermal management solutions. Its advanced trench field-stop technology ensures excellent switching characteristics and low conduction losses, optimizing power efficiency in high-power conversion circuits. This component is a reliable choice for engineers developing solutions in the industrial and power electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
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