NGTB20N120IHSWG
IGBT 1200V 20A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB20N120IHSWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 120 A. Optimized for efficient switching, it exhibits a Vce(on) of 2.4 V at 15 V Vge and 20 A Ic, with a typical turn-off delay of 160 ns at 25°C. The IGBT delivers a maximum power dissipation of 156 W and has a gate charge of 155 nC. Packaged in a TO-247-3 through-hole configuration, the NGTB20N120IHSWG operates across a temperature range of -55°C to 150°C. This component is suitable for power conversion systems in industrial motor drives and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/160ns |
| Switching Energy | 650µJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 155 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 156 W |
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