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NGTB15N60R2FG

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NGTB15N60R2FG

IGBT 600V 24A TO220F-3FS

Manufacturer: onsemi

Categories: Single IGBTs

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The onsemi NGTB15N60R2FG is a 600V, 24A Insulated Gate Bipolar Transistor (IGBT) packaged in a TO-220F-3FS. This device offers a maximum collector power dissipation of 54W and a continuous collector current of 24A, with a pulsed capability of 60A. Key electrical characteristics include a gate charge of 80 nC and an on-state voltage (Vce(on)) of 2.1V at 15V Vge and 15A Ic. Switching performance is characterized by a turn-on delay (Td(on)) of 70ns and a turn-off delay (Td(off)) of 190ns at 25°C, with a reverse recovery time (trr) of 95 ns. Switching energy is rated at 550 µJ for turn-on and 220 µJ for turn-off, tested under 300V, 15A, 30 Ohm, and 15V conditions. The IGBT operates at a maximum junction temperature of 175°C. This component is commonly utilized in power factor correction, motor control, and uninterruptible power supply (UPS) applications. It is supplied in tube packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)95 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 15A
Supplier Device PackageTO-220F-3FS
IGBT Type-
Td (on/off) @ 25°C70ns/190ns
Switching Energy550µJ (on), 220µJ (off)
Test Condition300V, 15A, 30Ohm, 15V
Gate Charge80 nC
Current - Collector (Ic) (Max)24 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)60 A
Power - Max54 W

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