NGTB15N60EG
IGBT 600V 30A 117W TO220-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB15N60EG is a 600V Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This through-hole component, packaged in a TO-220AB (TO-220-3), offers a continuous collector current rating of 30A, with a pulsed capability of 120A. Key performance parameters include a maximum collector-emitter saturation voltage (Vce(on)) of 1.95V at 15V gate-emitter voltage and 15A collector current. The device exhibits a gate charge of 80 nC and a maximum power dissipation of 117W. Switching characteristics at 400V, 15A, 22 Ohm using a 15V gate drive show turn-on delay (Td(on)) of 78ns and turn-off delay (Td(off)) of 130ns, with associated switching energies of 900µJ (on) and 300µJ (off). The reverse recovery time (trr) is specified at 270 ns. This IGBT is suitable for industrial power supplies, motor control, and uninterruptible power supplies (UPS).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 270 ns |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 15A |
| Supplier Device Package | TO-220AB |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 78ns/130ns |
| Switching Energy | 900µJ (on), 300µJ (off) |
| Test Condition | 400V, 15A, 22Ohm, 15V |
| Gate Charge | 80 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 117 W |
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