NGTB15N135IHRWG
IGBT TRENCH/FS 1350V 30A TO247Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi NGTB15N135IHRWG is a Trench Field Stop Insulated Gate Bipolar Transistor designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1350V and a continuous collector current rating of 30A, with a pulsed capability of 60A. The Vce(on) is specified at a maximum of 2.65V at 15V gate-emitter voltage and 15A collector current. With a gate charge of 156 nC and a maximum power dissipation of 357W, this IGBT is suitable for demanding power conversion and control circuits. The TO-247-3 package facilitates through-hole mounting. This device operates across a wide temperature range of -40°C to 175°C. Applications include industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.65V @ 15V, 15A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/170ns |
| Switching Energy | 420µJ (off) |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Gate Charge | 156 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 357 W |
Request a Quote
Clients Also Buy
FGY160T65SPD-F085
650V FS GEN3 TRENCH IGBT
NGD18N40CLBT4
IGBT 430V 15A DPAK
NGTB60N60SWG
IGBT 600V 120A 298W TO247
