NGTB15N120LWG
IGBT 1200V 30A 156W TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB15N120LWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 30A, with a pulsed capability of 120A. The collector-emitter saturation voltage (Vce(on)) is a maximum of 2.2V at 15V gate-emitter voltage and 15A collector current. With a maximum power dissipation of 229W, this IGBT offers typical switching times of 72ns turn-on and 165ns turn-off at 25°C. The device is housed in a TO-247-3 package, suitable for through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This IGBT is commonly employed in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 72ns/165ns |
| Switching Energy | 2.1mJ (on), 560µJ (off) |
| Test Condition | 600V, 15A, 15Ohm, 15V |
| Gate Charge | 160 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 229 W |
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