NGTB15N120IHWG
IGBT 15A 1200V TO-247Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi NGTB15N120IHWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current of 30 A, with a pulsed collector current (Icm) of 60 A. The IGBT type is Trench Field Stop, providing optimized switching characteristics. Key parameters include a Vce(on) of 2.45V at 15V gate-source voltage and 15A collector current, with switching energy (off) rated at 360µJ. The device operates within an ambient temperature range of -40°C to 175°C (TJ). The package is a TO-247-3, suitable for through-hole mounting. This IGBT is commonly utilized in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 15A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/130ns |
| Switching Energy | 360µJ (off) |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 278 W |
Request a Quote
Clients Also Buy
FGY160T65SPD-F085
650V FS GEN3 TRENCH IGBT
NGD18N40CLBT4
IGBT 430V 15A DPAK
NCG225L75NF8M1
IGBT 750V 225A FS4 DIE
