NGTB15N120IHRWG
IGBT TRENCH/FS 1200V 30A TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB15N120IHRWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 30 A (60 A pulsed). The Vce(on) is rated at 2.5 V at 15 V gate-emitter voltage and 15 A collector current. With a maximum power dissipation of 333 W and a junction temperature range of -40°C to 175°C, it offers robust performance. The TO-247-3 package facilitates through-hole mounting. Typical applications include power supplies, motor control, and industrial automation. The device exhibits a switching energy of 340 µJ (off) under test conditions of 600V, 15A, 10 Ohm, and 15V, with a turn-off delay of 170 ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/170ns |
| Switching Energy | 340µJ (off) |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Gate Charge | 160 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 333 W |
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