NGTB15N120IHLWG
IGBT 1200V 30A 156W TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB15N120IHLWG is a 1200 V Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a maximum continuous collector current (Ic) of 30 A and a pulsed collector current (Icm) of 120 A. The Vce(on) is specified at 2.2V maximum at 15V gate-emitter voltage and 15A collector current, with a typical turn-off delay time of 165ns at 25°C. The device offers a maximum power dissipation of 156 W and a gate charge of 160 nC. Mounted via a through-hole configuration, it is housed in a TO-247-3 package. Operating temperature range spans from -55°C to 150°C (TJ). This component is suitable for demanding applications in sectors such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/165ns |
| Switching Energy | 560µJ (off) |
| Test Condition | 600V, 15A, 15Ohm, 15V |
| Gate Charge | 160 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 156 W |
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