NGTB10N60R2DT4G
IGBT 600V 20A DPAKManufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB10N60R2DT4G is a 600V, 20A Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a maximum collector current of 20A (40A pulsed) and a low collector-emitter saturation voltage of 2.1V at 15V Vge and 10A Ic. With a maximum power dissipation of 72W and an operating temperature up to 175°C, it is suitable for use in power supplies, motor control, and industrial automation. The DPAK (TO-252-3) package facilitates efficient surface mounting. Key performance characteristics include a gate charge of 53 nC, switching energy of 412µJ (on) and 140µJ (off) under specified test conditions (300V, 10A, 30 Ohm, 15V), and a reverse recovery time of 90 ns. The device is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 90 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
| Supplier Device Package | DPAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 48ns/120ns |
| Switching Energy | 412µJ (on), 140µJ (off) |
| Test Condition | 300V, 10A, 30Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 72 W |
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