NGTB10N60FG
IGBT 600V 10A TO220F3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB10N60FG is a 600V, 20A insulated gate bipolar transistor (IGBT) designed for high-efficiency power switching applications. This through-hole component, packaged in a TO-220F-3FS, features a maximum collector current of 20A and a pulsed collector current of 72A. Its on-state voltage (Vce(on)) is 1.7V at 15V gate-emitter voltage and 10A collector current. The device exhibits typical turn-on delay of 40ns and turn-off delay of 145ns at 25°C. With a maximum power dissipation of 40W and an operating junction temperature of up to 150°C, the NGTB10N60FG is suitable for use in power supplies, industrial motor control, and uninterruptible power supplies. It offers a reverse recovery time of 70ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 70 ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 10A |
| Supplier Device Package | TO-220F-3FS |
| IGBT Type | - |
| Td (on/off) @ 25°C | 40ns/145ns |
| Switching Energy | - |
| Test Condition | 300V, 10A, 30Ohm, 15V |
| Gate Charge | 55 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 72 A |
| Power - Max | 40 W |
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