NGTB03N60R2DT4G
IGBT 9A 600V DPAKManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB03N60R2DT4G is a 600V, 9A Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. This DPAK package device offers a continuous collector current of 9A and a pulsed collector current of 12A. Key electrical characteristics include a Vce(on) of 2.1V at 15V and 3A, with a gate charge of 17 nC. The device boasts a maximum power dissipation of 49W and an operating junction temperature of 175°C. Switching performance is characterized by a Td(on/off) of 27ns/59ns at 25°C, with switching energy figures of 50µJ (on) and 27µJ (off) under the specified test conditions (300V, 3A, 30O, 15V). This component is commonly utilized in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 65 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 3A |
| Supplier Device Package | DPAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 27ns/59ns |
| Switching Energy | 50µJ (on), 27µJ (off) |
| Test Condition | 300V, 3A, 30Ohm, 15V |
| Gate Charge | 17 nC |
| Current - Collector (Ic) (Max) | 9 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 12 A |
| Power - Max | 49 W |
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