onsemi presents the NGD8205NT4, a 390V, 20A Insulated Gate Bipolar Transistor (IGBT) designed for high-power surface-mount applications. This component, packaged in a DPAK (TO-252-3) surface-mount package, offers a maximum continuous collector current of 20A and a pulsed collector current of 50A. With a Vce(on) of 1.9V at 4.5V gate-emitter voltage and 20A collector current, and a breakdown voltage of 390V, it is suitable for demanding power switching tasks. The NGD8205NT4 dissipates up to 125W and operates across a wide temperature range of -55°C to 175°C. Industries such as industrial automation, power supplies, and motor control commonly utilize this robust IGBT. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device Package | DPAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/5µs |
| Switching Energy | - |
| Test Condition | 300V, 9A, 1kOhm, 5V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 125 W |
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