NGD8205ANT4G
INSULATED GATE BIPOLAR TRANSISTOManufacturer: onsemi
Categories: Single IGBTs
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onsemi NGD8205ANT4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This surface-mount component, packaged in a TO-252 (DPAK) case, offers a collector-emitter breakdown voltage of 390V and a continuous collector current rating of 20A, with a pulsed capability of 50A. The device features a 125W maximum power dissipation and a low on-state voltage (Vce(on)) of 1.9V at 4.5V gate-emitter voltage and 20A collector current, based on a test condition of 300V, 9A, 1kOhm, 5V. Its logic input type and robust construction allow for operation across a wide temperature range of -55°C to 175°C. This IGBT is suitable for power switching in various industrial sectors, including automotive, industrial motor control, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device Package | TO-252 (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/5µs |
| Switching Energy | - |
| Test Condition | 300V, 9A, 1kOhm, 5V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 125 W |
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