NGD8201NT4G
IGBT 440V 20A DPAKManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGD8201NT4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 440 V and a continuous collector current (Ic) rating of 20 A, with a pulsed collector current (Icm) of 50 A. The NGD8201NT4G offers a maximum power dissipation of 125 W and a low on-state voltage (Vce(on)) of 1.9 V at 4.5 V gate-emitter voltage and 20 A collector current, specified with a test condition of 300 V, 9 A, 1 kOhm, and 5 V. With its logic-level gate input and surface mount DPAK (TO-252-3, DPAK) package, it is suitable for high-frequency switching applications. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial motor control, power supplies, and lighting control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device Package | DPAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/5µs |
| Switching Energy | - |
| Test Condition | 300V, 9A, 1kOhm, 5V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 440 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 125 W |
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