NGB8207NT4G
IGBT 365V 20A 165W D2PAKManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGB8207NT4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This surface mount device, packaged in a TO-263-3 D2PAK, offers a 365V collector-emitter breakdown voltage and a continuous collector current capability of 20A, with a pulsed current rating (Icm) of 50A. With a maximum power dissipation of 165W, it is suitable for power switching in industrial motor control, power supplies, and automotive systems. The IGBT features a logic input type and a low on-state voltage (Vce(on)) of 2.6V at 4V gate drive and 20A collector current. It operates within an extended temperature range of -55°C to 175°C (TJ). The NGB8207NT4G is supplied on tape and reel for efficient automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 4V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 365 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 165 W |
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