NGB8207BNT4G
INSULATED GATE BIPOLAR TRANSISTOManufacturer: onsemi
Categories: Single IGBTs
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onsemi NGB8207BNT4G is a surface-mount Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 365 V collector-emitter breakdown voltage and a continuous collector current of 20 A (50 A pulsed), dissipating a maximum power of 165 W. The IGBT exhibits a low Vce(on) of 2.6V at 4V gate voltage and 20A collector current. Its logic input type and D2PAK (TO-263-3) package facilitate integration into compact, high-density power designs. The operating temperature range is -55°C to 175°C (TJ). This device is commonly employed in industrial motor control, power supplies, and automotive electronics. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 4V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 365 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 165 W |
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