NGB8207ANT4G
IGBT 365V 20A 165W D2PAK3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGB8207ANT4G is a 365V, 20A Insulated Gate Bipolar Transistor (IGBT) designed for surface-mount applications. This component features a maximum power dissipation of 165W and a pulsed collector current capability of 50A. It is supplied in a TO-263-3, D2PAK package, facilitating efficient thermal management and automated assembly. The NGB8207ANT4G offers a Vce(on) of 2.2V at 3.7V gate-source voltage and 10A collector current, with a logic input type. Its robust construction and operating temperature range of -55°C to 175°C make it suitable for demanding applications in power supply, industrial motor control, and automotive sectors. The NGB8207ANT4G is delivered in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 3.7V, 10A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 365 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 165 W |
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